Journal article · January 2021
Stochastic Resonance in a Metal-Oxide Memristive Device
Chaos, Solitons and Fractals 144, 110723 (2021) · doi:10.1016/j.chaos.2021.110723
Abstract
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage. The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.
Cite
@article{Mikhaylov2021,
author = {Mikhaylov, A. N. and Guseinov, D. V. and Belov, A. I. and Korolev, D. S. and Shishmakova, V. A. and Koryazhkina, M. N. and Filatov, D. O. and Gorshkov, O. N. and Maldonado, D. and Alonso, F. J. and Roldán, J. B. and Krichigin, A. V. and Agudov, N. V. and Dubkov, A. A. and Carollo, Angelo and Spagnolo, B.},
doi = {10.1016/j.chaos.2021.110723},
issn = {09600779},
journal = {Chaos, Solitons and Fractals},
keywords = {Memristor,resistive switching,stochastic model,stochastic resonance,tantalum oxide,time series statistical analysis,yttria-stabilized zirconium dioxide},
pages = {110723},
title = {Stochastic Resonance in a Metal-Oxide Memristive Device},
volume = {144},
year = {2021}
}