Effect of Internal Noise on the Relaxation Time of an Yttria Stabilized Zirconia-Based Memristor

D.O. Filatov, M.N. Koryazhkina, A.S. Novikov, V.A. Shishmakova, M.E. Shenina, I.N. Antonov, O.N. Gorshkov, N.V. Agudov, Angelo Carollo, Davide Valenti, Bernardo Spagnolo

January 2022

Abstract

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 $^∘$C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Type

Journal article

Publication

Chaos, Solitons and Fractals

Effect of Internal Noise on the Relaxation Time of an Yttria Stabilized Zirconia-Based Memristor

Abstract

Angelo Carollo

Associate Professor

Davide Valenti

Full Professor